Work

Energy Materials : Growth of Nano Structure Bi2Te3 Films using Modified MOCVD Technique

Year: 2010

Type: article

Abstract: Nano structure $Bi_2Te_3$ films were deposited on (100) GaAs substrates using a modified MOCVD system and the effect of growth parameters on the structural properties were investigated. Different from conventional MOCVD systems, our reactor consist of pressure control unit and two heating zones ; one for formation of nano-sized particles and the other for the growth of nano particles on substrates. By using this instrument we successfully grow $Bi_2Te_3$ films with nano-grain size. The film grown at high reactor pressure has large grain size. On the contrast, the grain size decreases with a decrease in pressure of the reactor. Here, we introduce new growth methods of nano-grain structured $Bi_2Te_3$ films for high thermoelectric figure of merit.

Source: Journal of the Korean Institute of Electrical and Electronic Material Engineers

DOI: 10.4313/jkem.2010.23.6.497

Authors: Hyun Woo You, Kyoo Ho Jung, Ju Hyuk Yim, Kwang Chon Kim, Chan Park, Jin Sang Kim

Institutions: Seoul National University, Yonsei University, Korea Institute of Science and Technology

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

OpenAlex ID: W2019534303