Year: 1982
Type: article
Abstract: A large volume high pressure apparatus has made it possible to grow large single crystals of black phosphorus, P. After converting red P powder into black P under a high pressure of 10 kbar at high temperature, a melt of polycrystalline black P has been gradually solidified to bring about the growth of single crystals. Crystal sizes larger than 5×5×10 mm3 are, for the first time, adequate for various measurements of the physical properties expected for this narrow gap semiconductor with a special layered structure. An X-ray analysis has proved the good single crystalline structure.
DOI: 10.1143/jjap.21.l482
Institution: The University of Osaka
Language: English
Subfield: Geophysics
Field: Earth and Planetary Sciences
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2019836262