Work

Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors

Year: 1996

Type: article

Abstract: We present a concept for the realization of InGaAs/InP micromachined thermoelectric sensors. The advantages of InGaAs lattice matched to InP combine perfectly for this application. The high selectivity of wet chemical etching of InP against InGaAs is ideally suited for surface bulk micromachining. Thermoelectric InGaAs sensors profit from the high thermal resistivity combined with high electrical conductivity and Seebeck effect. Thanks to the material parameters a responsivity of 257 V/W and relative detectivity of 6.4×108 cm Hz−1/2/W are expected for infrared sensors.

Source: Applied Physics Letters

DOI: 10.1063/1.116832

Authors: Alfons Dehé, Hans L. Hartnagel, Dimitris Pavlidis, Kyushik Hong, E. Kuphal

Institutions: Technische Universität Darmstadt, University of Michigan, Deutsche Telekom (Germany)

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2020024655

FWCI: 0.324

Cites:

Cited by: 6

Related to: 10