Work

The investigation of mole fraction dependence of mobility for InxGa1−xN alloy

Year: 2005

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2004.12.004

Authors: S. Aydogu, O. Ozbas

Institution: Eskişehir Osmangazi University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2020434211

FWCI: 0.258

Cites: 28

Cited by: 10

Related to: 10