Work

Doping properties of selected impurities in Hg1−x Cdx Te

Year: 1977

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/bf02660335

Authors: Eric S. Johnson, J. L. Schmit

Institution: Honeywell (United States)

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2020579532

FWCI: 4.002

Cites: 9

Cited by: 61

Related to: 10