Work

Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors

Year: 1995

Type: article

Source: Microelectronics Journal

DOI: 10.1016/0026-2692(95)98927-j

Authors: M. Mouis, H.J. Gregory, S. Denorme, D. Mathiot, P. Ashburn, D.J. Robbins, J.L. Glasper

Institutions: Orange (France), University of Southampton

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Indian National Science Academy, Centre National de la Recherche Scientifique

OpenAlex ID: W2021389495

FWCI: 0.958

Cites: 9

Cited by: 3

Related to: 10