Work

Simple two-step fabrication method of Bi2Te3 nanowires

Year: 2011

Type: article

Abstract: Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

Source: Nanoscale Research Letters

DOI: 10.1186/1556-276x-6-277

Authors: Joohoon Kang, Jin-Seo Noh, Wooyoung Lee

Institution: Yonsei University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,790

Funders: National Research Foundation of Korea, Ministry of Education, Science and Technology