Electron mobility in amorphous silicon thin-film transistors under compressive strain
Year: 2001
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1418254
Authors: H. Gleskova, S. Wagner
Institution: Princeton University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2024290268