Work

Metallic Contact Formation for Molecular Electronics: Interactions between Vapor-Deposited Metals and Self-Assembled Monolayers of Conjugated Mono- and Dithiols

Year: 2004

Type: article

Abstract: We present grazing-incidence Fourier transform infrared and AFM data of Au, Al, and Ti vapor-deposited onto self-assembled monolayers (SAMs) of conjugated mono- and dithiols. SAMs of 4,4'''-dimercapto-p-quaterphenyl, 4,4"-dimercapto-p-terphenyl, and 4,4'-dimercapto-p-biphenyl have reactive thiols at the SAM/vacuum interface that interact with vapor-deposited Au or Al atoms, preventing metal penetration. Conjugated monothiols lack such metal blocking groups, and metals (Au, Al) can penetrate into their SAMs. Vapor deposition of Ti onto conjugated mono- and dithiol SAMs and onto hexadecanethiol SAMs destroys the monolayers.

Source: Langmuir

DOI: 10.1021/la0356349

Authors: Bert de Boer, Martin M. Frank, Yves J. Chabal, Weirong Jiang, Eric Garfunkel, Zhenan Bao

Institution: Rutgers, The State University of New Jersey

Language: English

Topic: Molecular Junctions and Nanostructures

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2024712098

FWCI: 21.49

Cites: 37

Cited by: 197

Related to: 10