Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers
Year: 1970
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.1659111
Authors: F. F. Fang, A. B. Fowler
Institution: IBM Research - Thomas J. Watson Research Center
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2024848030