Year: 1990
Type: article
Abstract: In situ epitaxial growth of BiSrCaCuO films by three target sputtering was performed on MgO substrates at a temperature of 650°C. From high resolution transmission electron microscopy, the film showed a superstructure consisting of the alternate stacking of the low-T c and high-T c phases with a c-axis of 34 Å. The film in the [110] or [1 1̄0] directions was parallel to <100 >MgO, and the transient layers between the substrate and the film were less than a few atomic layers thick. X-ray diffraction simulations indicated that the films contained random layer ordering of 34 Å bi-layers (low-T c+high-T c and high-T c+low-T c) and random layer ordering of low-T c and high-T c phase layers.
Authors: Kazuyoshi Kojima, Darrell G. Schlom, Ken'ichi Kuroda, Masami Tanioku, Koichi Hamanaka, James N. Eckstein, James S. Harris, Jr. Jr.
Institutions: Mitsubishi Electric (Japan), Stanford University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2024929778