Work

An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors

Year: 2005

Type: article

Source: Molecular Simulation

DOI: 10.1080/0892702051233132

Authors: J.L. Autran ¶, D. Munteanu, O. Tintori, E. Decarre, A.M. Ionescu

Institutions: Centre National de la Recherche Scientifique, Institut de Recherche sur les Phénomènes Hors Équilibre, École Polytechnique Fédérale de Lausanne

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2025430518

FWCI: 1.272

Cites: 6

Cited by: 11

Related to: 10