Work

Synthesis and high temperature thermoelectric transport properties of Si-based type-I clathrates

Year: 2009

Type: article

Abstract: N-type Si-based type-I clathrates with different Ga content were synthesized by combining the solid-state reaction method, melting method and spark plasma sintering (SPS) method. The effects of Ga composition on high temperature thermoelectric transport properties were investigated. The results show that at room temperature, the carrier concentration decreases, while the carrier mobility increases slightly with increasing Ga content. The Seebeck coefficient increases with increasing Ga content. Among all the samples, Ba 7.93 Ga 17.13 Si 28.72 exhibits higher Seebeck coefficient than the others and reaches -135 μV.K -1 at 1000 K. The sample prepared by this method exhibits very high electrical conductivity, and reaches 1.95 × 10 5 S.m -1 for Ba 8.01 Ga 16.61 Si 28.93 at room temperature. The thermal conductivity of all samples is almost temperature independent in the temperature range of 300–1000 K, indicating the behaviour of a typical metal. The maximum ZT value of 0.75 is obtained at 1000 K for the compound Ba 7.93 Ga 17.13 Si 28.72.

Source: Chinese Physics B

DOI: 10.1088/1674-1056/18/7/079

Authors: Deng Shu-Kang, Tang Xin-Feng, Tang Run-Sheng

Institutions: Yunnan Normal University, Wuhan University of Technology, State Key Laboratory of Advanced Technology For Materials Synthesis and Processing

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funder: National Key Research and Development Program of China

Awards: G1640677382, G1790411698