Work

Applying Complementary Trap Characterization Technique to Crystalline $\gamma$-Phase-$\hbox{Al}_{2} \hbox{O}_{3}$ for Improved Understanding of Nonvolatile Memory Operation and Reliability

Year: 2010

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2010.2071071

Authors: Mohammed B. Zahid, Daniel Ruiz Aguado, R. Degraeve, W. C. Wang, Bogdan Govoreanu, María Toledano-Luque, V. V. Afanasev, Jan Van Houdt

Institutions: IMEC, KU Leuven, Universidad Complutense de Madrid

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2026418832

FWCI: 1.993

Cites: 31

Cited by: 40

Related to: 10