Work

Conductance quantization in etched Si∕SiGe quantum point contacts

Year: 2006
Type: article
Abstract: We fabricated strongly confined Schottky-gated quantum point contacts by etching $\mathrm{Si}∕\mathrm{Si}\mathrm{Ge}$ heterostructures and observed intriguing conductance quantization in units of approximately $1{e}^{2}∕h$. Nonlinear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidence of the formation of a half $1{e}^{2}∕h$ plateau, supporting the speculation that adiabatic transmission occurs through one-dimensional modes with complete removal of valley and spin degeneracies.
Language: Latvian
Open Access status: green
OpenAlex ID: W2026732906
FWCI: 2.144
Cites: 52
Cited by: 22
Related to: 10