Year: 2012
Type: article
Abstract: magnified image The semiconducting half‐Heusler compound YPtSb has been predicted to convert into a topological insulator under the application of an appropriate degree of strain. In this study, p‐type semiconducting YPtSb thin films were prepared by magnetron co‐sputtering, using a specially designed target. YPtSb thin films grown on MgO (100) substrates at 600 °C showed a textured structure with the (111) plane parallel to the (001) plane of MgO. Electrical measurements showed that the resistivity of the YPtSb films decreases with increasing temperature, indicating semiconductor‐like behavior. The carrier density was as high as 1.15 × 1021 cm–3 at 300 K. The band gap of the YPtSb thin films was around 0.1–0.15 eV, which was in good agreement with the theoretical prediction and the value measured for bulk YPtSb. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Authors: Rong Shan, Enrique V. Vilanova, Juan Qin, Frederick Casper, Gerhard H. Fecher, Gerhard Jakob, Claudia Felser
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funder: Deutsche Forschungsgemeinschaft
OpenAlex ID: W2027060583