Year: 1980
Type: article
Abstract: The mechanism of the yellow luminescence in GaN has been studied. The yellow band is observed in microcrystals synthesized from Ga and NH 3 by direct reaction, but is not observed in needle-like crystals grown by sublimation-recrystallization. Doping with carbon emphasizes the yellow band. The characteristic excitation band is observed in C-doped GaN. The yellow band is due to a radiative transition from a shallow donor with a depth of 25 meV to a deep acceptor with a depth of 860 meV. The relation between the characteristic excitation band and the emission band is interpreted by the simple configuration coordinate model. The deep acceptor is thought to be a complex consisting of a gallium vacancy and a carbon atom substituted for a nearest neighbour of the gallium sites.
DOI: 10.1143/jjap.19.2395
Authors: Toshio Ogino, Masaharu Aoki
Institution: The University of Tokyo
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2027197488