Year: 2007
Type: article
Abstract: The relative mobility of holes versus electrons in π‐conjugated materials is a long‐standing issue in the field of organic electronics. In this Progress Report, we first argue on the basis of theoretical considerations that in general organic semiconductors are intrinsically as good electron transporters as they are hole transporters. Then, in the light of selected experimental works, we discuss the origin of the features that prevent the observation of intrinsic electron transport, and the strategies that have been developed to promote ambipolar transport in field‐effect transistors.
Source: Advanced Materials
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funders: National Science Foundation, Bill and Melinda Gates Foundation, Georgia Institute of Technology, Georgia Research Alliance, Australian Government, European Commission, Fonds De La Recherche Scientifique - FNRS, University of California, Santa Barbara, Materials Research Science and Engineering Center, Harvard University, Engineering and Physical Sciences Research Council, Université de Namur, Office of Naval Research, Division of Materials Research, Division of Chemistry
Awards: G3135643260, University of Minnesota-Materials Research Science and Engineering Center, G4385178851, Center on Materials and Devices for Information Technology Research, G7427925710, Purchase of a Computer Cluster for Computational Molecular and Materials Chemistry, Electronic, Optical, and Interfacial Properties of pi-Conjugated Materials
OpenAlex ID: W2027652587