Work

Perturbing GaN/AlN quantum dots with uniaxial stressors

Year: 2009

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.200881513

Authors: Ofer Moshe, Daniel H. Rich, Benjamin Damilano, Jean Massies

Institutions: Ben-Gurion University of the Negev, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2027765280

FWCI: 1.015

Cites:

Cited by: 4

Related to: 10