Work

Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open‐Circuit Voltage in Cuprous Oxide Solar Cells

Year: 2014

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.201401054

Authors: Yun Seog Lee, Danny Chua, Riley E. Brandt, Sin Cheng Siah, Jian V. Li, Jonathan P. Mailoa, Sang Woon Lee, Roy G. Gordon, Tonio Buonassisi

Institutions: Massachusetts Institute of Technology, Harvard University, National Laboratory of the Rockies

Language: English

Topic: Copper-based nanomaterials and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Energy, Harvard University, Division of Materials Research, Division of Electrical, Communications and Cyber Systems

OpenAlex ID: W2027867679

FWCI: 15.49

Cites: 41

Cited by: 271

Related to: 10