Work

Gate controlled vertical-lateral NPN bipolar transistor in 90nm RF CMOS process

Year: 2008

Type: conference-paper

Source: IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

DOI: 10.1109/bipol.2008.4662706

Authors: Zhiming Feng, Shuo-Mao Chen, Cliff Xie, Yan Cui, Mike Brunsman, C.P. Chao, H.C. Tseng, Guofu Niu, G. Ali Rezvani

Institutions: National Cheng Kung University, Taiwan Semiconductor Manufacturing Company (Taiwan), Auburn University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2028054319

FWCI: 0.474

Cites: 1

Cited by: 2

Related to: 10