Work

Effect of near-surface band bending on dopant profiles in ion-implanted silicon

Year: 2004

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1638621

Authors: Michael Y. L. Jung, Rudiyanto Gunawan, Richard D. Braatz, E. G. Seebauer

Institutions: University of Illinois Urbana-Champaign, University of Illinois System

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

OpenAlex ID: W2028139109

FWCI: 4.232

Cites: 54

Cited by: 33

Related to: 10