Parameter Sensitivity Analysis Applied to Modeling Transient Enhanced Diffusion and Activation of Boron in Silicon
Year: 2003
Type: article
DOI: 10.1149/1.1619992
Institution: University of Illinois Urbana-Champaign
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: National Science Foundation
OpenAlex ID: W2028945315