Work

Excess carrier lifetime and ambipolar diffusion anisotropy in a nipi-doped In0.2Ga0.8As/GaAs multiple-quantum-well structure

Year: 1996

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.361467

Authors: H. T. Lin, D. H. Rich, A. Larsson

Institutions: University of Southern California, Chalmers University of Technology

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Army Research Office

OpenAlex ID: W2029258504

FWCI:

Cites: 22

Cited by: 4

Related to: 10