Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip
Year: 2012
Type: article
Abstract: In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3 µm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2 µm.
Source: Optics Express
DOI: 10.1364/oe.20.011665
Institutions: Ghent University, Institut d'Électronique et des Systèmes
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
OpenAlex ID: W2029523958