Work

Very-high power density AlGaN/GaN HEMTs

Year: 2001

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.906455

Authors: Yi-Feng Wu, D. Kapolnek, J.P. Ibbetson, P. Parikh, B.P. Keller, U.K. Mishra

Institutions: Wolfspeed, Inc. (United States), Ericsson (United States), University of California, Santa Barbara

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: California Institute of Technology, University of California, Santa Barbara

OpenAlex ID: W2029837243

FWCI: 22.98

Cites: 5

Cited by: 579

Related to: 10