Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
Year: 2013
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4811483
Institution: Seoul National University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2030237677