Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation
Year: 2000
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1308055
Authors: X. Zhang, P. D. Dapkus, D. H. Rich
Institution: University of Southern California
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2030454817