Work

Summary Abstract: Interface state measurement of epitaxial and nonepitaxial nickel silicide Schottky barriers

Year: 1985

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

DOI: 10.1116/1.583073

Authors: X. Wu, H. L. Evans, E. S. Yang, M. Liehr, P. S. Ho

Institutions: Columbia University, IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2030825898

FWCI: 0.715

Cites:

Cited by: 4

Related to: 10