Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors
Year: 2009
Type: article
Source: Nature Materials
DOI: 10.1038/nmat2560
Institution: Johns Hopkins University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2031065678
