Integrated atomic force microscopy array probe with metal–oxide–semiconductor field effect transistor stress sensor, thermal bimorph actuator, and on-chip complementary metal–oxide–semiconductor electronics
Year: 2000
Type: article
Abstract: A microfabricated 2×1 array of active and self-detecting cantilevers is presented for applications in atomic force microscopy (AFM). The integrated deflection sensor is based on a stress sensing metal–oxide–semiconductor transistor. Full custom complementary metal–oxide–semiconductor amplifiers for signal readout are combined on the same chip. A sensor sensitivity of 2.25 mV/nm, or a change in current ΔId/Id=2.8×10−6/nm, was obtained at the final output stage. Three Al–Si thermal bimorph actuators are integrated on each cantilever for self-excitation and feedback actuation. The efficiencies of the heaters are 2.4–4.7 K/mW. In the experimental setup, a maximum displacement of 8 μm was achieved at 45 mW input. A pair of parallel AFM images in the constant height mode, a typical tapping mode image, and a constant force image with 1.3 μm high features have been successfully taken with the array probe.
DOI: 10.1116/1.1327299
Authors: T. Akiyama, U. Staufer, N. F. de Rooij, D. Lange, C. Hagleitner, O. Brand, H. Baltes, A. Tonin, H. R. Hidber
Institutions: University of Neuchâtel, ETH Zurich, University of Basel
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2031174018