Work

Site effect on the impurity levels in 4H , 6H , and 15R SiC

Year: 1980

Type: article

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.22.2842

Authors: M. Ikeda, H. Matsunami, T. Tanaka

Institution: Kyoto University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2031264725

FWCI: 0.558

Cites: 36

Cited by: 338

Related to: 10