Work

Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si0.83Ge0.17 alloys

Year: 2007

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.2732680

Authors: D. D’Angelo, A. M. Piro, A. Terrasi, M. G. Grimaldi, S. Mirabella, C. Bongiorno

Institutions: University of Catania, Institute for Microelectronics and Microsystems

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Ministero dell’Istruzione, dell’Università e della Ricerca, Centre National de la Recherche Scientifique

OpenAlex ID: W2031641941

FWCI:

Cites: 33

Cited by: 6

Related to: 10