Work

5 nm thick lanthanum oxide thin films grown on Si(100) by atomic layer deposition: The effect of post-annealing on the electrical properties

Year: 2006
Type: article
Institution: Korea University
Language: English
Open Access status: closed
OpenAlex ID: W2032907020
FWCI: 5.053
Cites: 27
Cited by: 59
Related to: 10