Work

Study the Formation Mechanism of Silicon Carbide Polytype by Silicon Carbide Nanobelts Sintered Under High Pressure

Year: 2011

Type: article

Source: Journal of Nanoscience and Nanotechnology

DOI: 10.1166/jnn.2011.5240

Authors: Guodong Wei, Guangqian Zhang, Fenmei Gao, Jinju Zheng, Yanfen Qin, Wei Han, Weiping Qin, Weiyou Yang

Institution: Ningbo University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2033820289

FWCI: 0.224

Cites:

Cited by: 3

Related to: 10