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Oxygen-Atom Defects In 6H Silicon Carbide Implanted Using 24- MeV O[sup 3+] Ions Measured Using Three-Dimensional Positron Annihilation Spectroscopy System (3DPASS)

Year: 2011

Type: conference-paper

Source: AIP conference proceedings

DOI: 10.1063/1.3586141

Authors: Christopher S. Williams, Xiaofeng F. Duan, James C. Petrosky, Larry W. Burggraf, Floyd D. McDaniel, Barney L. Doyle

Institutions: Wright-Patterson Air Force Base, U.S. Air Force Institute of Technology, United States Air Force Research Laboratory

Language: English

Topic: Muon and positron interactions and applications

Subfield: Mechanics of Materials

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2034118117

FWCI:

Cites: 1

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Related to: 10