Year: 2010
Type: article
Abstract: A new model for graphene epitaxially grown on silicon carbide is proposed. Density functional theory modeling of epitaxial graphene functionalization by hydrogen, fluorine, methyl and phenyl groups has been performed, with hydrogen and fluorine showing a high probability of cluster formation in high adatom concentration. It has also been shown that the clusterization of fluorine adatoms provides midgap states in formation, due to significant flat distortion of graphene. The functionalization of epitaxial graphene using larger species (methyl and phenyl groups) renders cluster formation impossible, due to the steric effect, and results in uniform coverage with the energy gap opening.
Source: Nanotechnology
Author: D W Boukhvalov
Institution: National Institute for Materials Science
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2034488077