Work

Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation

Year: 2003

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1532103

Authors: V. V. Afanas’ev, A. Stesmans, F. Ciobanu, G. Pensl, K. Y. Cheong, S. Dimitrijev

Institutions: KU Leuven, Friedrich-Alexander-Universität Erlangen-Nürnberg, Griffith University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2034670541

FWCI: 9.468

Cites: 20

Cited by: 203

Related to: 10