Heat Capacity of P-Doped Si Thermistors at Low and Very Low Temperature Measured by Alpha-Particles and X-Rays
Year: 1988
Type: article
Abstract: The heat capacities of three specially implanted silicon bolometers have been measured at low and, for the first time, at very low temperatures down to about 10 mK by exposing them to alpha-particles and X-rays. The lattice contribution shows a behaviour with temperature in good agreement with the Debye law, and the percentage of thermalized energy of the alpha-particle is found to be about 70%. The specific heat of the doped part, which dominates at very low temperatures, is not inconsistent with linearity, even if a dependence on a higher power of the temperature seems preferred. The parameter of linearity is found to be considerably larger than expected from extrapolation to very low temperatures of the existing results on silicon P-doped by diffusion.
Source: Europhysics Letters (EPL)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2036005121