Work

Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

Year: 2013

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.4808093

Authors: Christine M. Jackson, Aaron R. Arehart, Emre Cinkilic, Brian McSkimming, James S. Speck, Steven A. Ringel

Institutions: University of California, Santa Barbara, The Ohio State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Multidisciplinary University Research Initiative, Office of Naval Research

OpenAlex ID: W2036568490

FWCI: 4.602

Cites: 29

Cited by: 57

Related to: 10