Work

Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy

Year: 2014

Type: article

Abstract: By integrating silicon nanowires (∼150 nm diameter, 20 μm length) with an Ω-shaped plasmonic nanocavity, we are able to generate broadband visible luminescence, which is induced by high order hybrid nanocavity-surface plasmon modes. The nature of this super bandgap emission is explored via photoluminescence spectroscopy studies performed with variable laser excitation energies (1.959 to 2.708 eV) and finite difference time domain simulations. Furthermore, temperature-dependent photoluminescence spectroscopy shows that the observed emission corresponds to radiative recombination of unthermalized (hot) carriers as opposed to a resonant Raman process.

Source: Nano Letters

DOI: 10.1021/nl502606q

Authors: Carlos O. Aspetti, Chang-Hee Cho, Rahul Agarwal, Ritesh Agarwal

Institutions: University of Pennsylvania, Daegu Gyeongbuk Institute of Science and Technology

Language: English

Topic: Plasmonic and Surface Plasmon Research

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $4,500

Funders: National Research Foundation of Korea, National Institutes of Health, National Center for Chronic Disease Prevention and Health Promotion, Army Research Office