Work

Structural, electrical and optical characterization of InGaN layers grown by MOVPE

Year: 2009

Type: article

Source: Chinese Physics B

DOI: 10.1088/1674-1056/18/9/065

Authors: Yıldız A, Öztürk M Kemal, Bosi M, Özçelik S, Kasap M

Institutions: Ahi Evran University, Maden Tetkik ve Arama Genel Müdürlüğü, Institute of Materials for Electronics and Magnetism, Gazi University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2037506183

FWCI: 0.82

Cites: 22

Cited by: 13

Related to: 10