O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors
Year: 2010
Type: article
Abstract: We find that O-vacancy (VO) acts as a hole trap and plays a role in negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors. Photoexcited holes drift toward the channel/dielectric interface due to small potential barriers and can be captured by VO in the dielectrics. While some of VO+2 defects are very stable at room temperature, their original deep states are recovered via electron capture upon annealing. We also find that VO+2 can diffuse in amorphous phase, inducing hole accumulation near the interface under negative gate bias.
Source: Applied Physics Letters
DOI: 10.1063/1.3464964
Authors: Byungki Ryu, Hyeon-Kyun Noh, Eun-Ae Choi, K. J. Chang
Institution: Korea Advanced Institute of Science and Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2038313135