Work

Consistent Hydrodynamic and Monte‐Carlo Simulationof SiGe HBTs Based on Table Modelsthe Relaxation Times

Year: 1998

Type: article

Abstract: Good agreement between a hydrodynamic and a Monte‐Carlo device model is demonstrated in this paper for an advanced SiGe Heterojunction Bipolar Transistor. This result is based on two principles: 1) Extraction (from the Monte‐Carlo bulk model under homogeneous conditions) of the relaxation times τ at discrete points of the parameter space spanned by the Ge‐content x, doping density N, carrier temperature TC and lattice temperature TL. 2) Modeling of the relaxation times τ(x, TC, TL) by splines.

Source: VLSI design

DOI: 10.1155/1998/49783

Authors: B. Neinhüs, S. Decker, P. Graf, F. M. Bufler, B. Meinerzhagen

Institution: University of Bremen

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: Siemens, RWTH Aachen University

OpenAlex ID: W2038580101