Work

Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

Year: 2011

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2011.6131606

Authors: T. S. Boscke, J. Muller, D. Brauhaus, U. Schroder, U. Bottger

Institutions: Center Nanoelectronic Technologies, RWTH Aachen University, NaMLab (Germany)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2039011822

FWCI: 4.668

Cites: 11

Cited by: 370

Related to: 10