Work

Suppression of parasitic bipolar effects and off-state leakage in fully-depleted SOI n-MOSFET's using Ge-implantation

Year: 1995

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.477766

Authors: Hua-Fang Wei, J.E. Chung, N.M. Kalkhoran, F. Namavar

Institutions: Massachusetts Institute of Technology, Spire Corporation (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2040784019

FWCI: 0.479

Cites: 9

Cited by: 6

Related to: 10