Work

Thermoelectric properties of junctions between metal and strongly correlated semiconductor

Year: 2000

Type: article

Abstract: We propose a junction of metal and rare-earth compound semiconductor as the basis for a possible efficient low-temperature thermoelectric device. If an overlayer of rare-earth atoms differing from the bulk is placed at the interface, very high values of the figure of merit ZT can be reached at low temperature. This is due to sharp variation of the transmission coefficient of carriers across the junction at a narrow energy range, which is intrinsically linked to the localized character of the overlayer f orbital.

Source: Applied Physics Letters

DOI: 10.1063/1.1323738

Authors: Massimo Rontani, L. J. Sham

Institutions: University of Modena and Reggio Emilia, University of California San Diego

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, Division of Materials Research

Award: Theory of Electrons in Solids