Work

Effect of PVF interface barrier layer on TSD behaviour of a-Se films

Year: 2001

Type: article

Abstract: Thermally stimulated discharge (TSD) current behaviour of amorphous selenium (a-Se) films (~100 µm thick) has been studied as a function of polyvinyl fluoride (PVF) interface barrier layer thickness in the range of 2000-8000 Å (temperature range of 295-385 K). TSD spectra of these films show that charge storage in a-Se reduces considerably on incorporation of a PVF interface barrier layer. These effects have been attributed to the blocking and field enhanced mobility role of the PVF interface layer.

Source: Journal of Physics D Applied Physics

DOI: 10.1088/0022-3727/34/18/316

Authors: Suresh Chand, G D Sharma, S Dwivedi, Ashutosh Agarwal, R Chandra

Institutions: CSIR National Physical Laboratory of India, Delhi Technological University

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2041213074

FWCI: 0.272

Cites: 12

Cited by: 2

Related to: 10