Year: 1999
Type: article
Abstract: We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One-half of the nanotube has no impurity, and it has a current-voltage $(I\ensuremath{-}V)$ characteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its $I\ensuremath{-}V$ characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 K we observe a stepwise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.
Source: Physical Review Letters
Authors: R. D. Antonov, A. T. Johnson
Institution: University of Pennsylvania
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2041714143