Novel metalorganic chemical vapor deposition system for GaN growth
Year: 1991
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.105239
Authors: Shuji Nakamura, Yasuhiro Harada, Masayuki Seno
Institution: Nichia Corporation (Japan)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2042076370